? 2006 fairchild semiconductor corporation FDC608PZ rev b (w) FDC608PZ p-channel 2.5v specified powertrench ? mosfet general description this p-channel 2.5v specif ied mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. these devices are well suited for battery power applications: load switching and power management, battery power circuits, and dc/dc conversions. features ? ?5.8 a, ?20 v. r ds(on) = 30 m ? @ v gs = ?4.5 v r ds(on) = 43 m ? @ v gs = ?2.5 v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? supersot tm ?6 package: small footprint (72% smaller than standard so ?8) low profile (1mm thick). d d d s d g supersot -6 tm absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v drain current ? continuous (note 1a) ?5.8 i d ? pulsed ?20 a maximum power dissipation (note 1a) 1.6 p d (note 1b) 0.8 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 30 c/w package marking and ordering information device marking device reel size tape width quantity .608z FDC608PZ 7?? 8mm 3000 units 6 5 4 1 2 3 FDC608PZ tm june 2006
FDC608PZ rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?10 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gss gate?body leakage v gs = 12 v, v ds = 0 v 10 a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?1.0 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5v, i d = ?5.8 a v gs = ?2.5v, i d = ?5.0 a v gs = ?4.5v,i d = ?5.8a,t j =125 c 26 38 35 30 43 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?10 v, i d = ?5.8 a 22 s dynamic characteristics c iss input capacitance 1330 pf c oss output capacitance 270 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 230 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 12 ? switching characteristics (note 2) t d(on) turn?on delay time 13 24 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 91 145 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 60 96 ns q g total gate charge 17 23 nc q gs gate?source charge 3 nc q gd gate?drain charge v ds = ?10 v, i d = ?5.8 a, v gs = ?4.5 v 6 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.3 a (note 2) ?0.7 ?1.2 v t rr diode reverse recovery time i f = ?5.8 a, d if /d t = 100a/s 40 60 ns q rr diode reverse recovery charge i f = ?5.8 a, d if /d t = 100a/s 15 23 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mou nting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a. 78c/w when mounted on a 1in 2 pad of 2oz copper on fr-4 board. b. 156c/w when mounted on a minimum pad. 2. pulse test: pulse width 300 s, duty cycle 2.0% FDC608PZ
FDC608PZ rev b (w) typical characteristics 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -3.0v -2.0v -2.5v -3.5v 0.6 1 1.4 1.8 2.2 2.6 0 5 10 15 20 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -3.0v -2.5v -3.5v -4.5v -4.0v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.7 0.9 1.1 1.3 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -5.8a v gs = -4.5v 0.02 0.04 0.06 0.08 0.1 0246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -2.9a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDC608PZ
FDC608PZ rev b (w) typical characteristics 0 2 4 6 8 10 0 10203040 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -5.8a v ds = -5v -15v -10v 0 500 1000 1500 2000 2500 0246810 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 s r ds(on) limit v gs = -4.5v single pulse r ja = 156 o c/w t a = 25 o c 10ms 1ms 0 2 4 6 8 10 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 156c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 156 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described i n note 1b. transient thermal response will change depending on the circuit boa rd design. FDC608PZ
rev. i20 trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fai rchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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